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| N-Channel Power MOSFET DMOS Structure Low On-State Resistance : 0.05(MAX.) Ultra High-Speed Switching SOT-89 Package Gate Protect Diode Built-in APPLICATIONS Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery systems GENERAL DESCRIPTION The XP161A1355PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. FEATURES Low On-State Resistance : Rds (on)= 0.05@ Vgs = 4.5V : Rds (on)= 0.07@ Vgs = 2.5V : Rds (on)= 0.15@ Vgs = 1.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 1.5V High Density Mounting : SOT-89 PIN CONFIGURATION PIN ASSIGNMENT PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain Source EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS Ta = 25 PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Channel Power Dissipation * Channel Temperature Storage Temperature Range SYMBOL RATINGS Vdss Vgss Id Idp Idr Pd Tch Tstg 20 8 4 16 4 2 150 -55~150 UNITS V V A A A W * When implemented on a ceramic PCB 1526 XP161A1355PR ETR1124_001.doc XP161A11A1PR XP161A1355PR ELECTRICAL CHARACTERISTICS DC Characteristics PARAMETER Drain Cut-Off Current Gate-Source Leak Current Gate-Source Cut-Off Voltage Drain-Source On-State Resistance *1 SYMBOL Idss Igss Vgs(off) Rds(on) CONDITIONS Vds=20V, Vgs= 0V Vgs= 8V, Vds= 0V Id= 1mA, Vds= 10V Id= 2A, Vgs= 4.5V Id= 2A, Vgs= 2.5V Id= 0.5A, Vgs= 1.5V Forward Transfer Admittance *1 Body Drain Diode Forward Voltage | Yfs | Vf Id= 2A, Vds= 10V If= 4A, Vgs= 0V MIN. 0.5 TYP. 0.037 0.05 0.1 10 0.85 MAX. 10 10 1.2 0.050 0.07 0.15 1.1 Ta = 25 UNITS A A V S V *1 Effective during pulse test. Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss Vds= 10V, Vgs=0V f= 1MHz CONDITIONS MIN. TYP. 390 210 90 MAX. - Ta = 25 UNITS pF pF pF Switching Characteristics PARAMETER Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs= 5V, Id=2A Vdd= 10V CONDITIONS MIN. TYP. 10 15 85 45 MAX. - Ta = 25 UNITS ns ns ns ns Thermal Characteristics PARAMETER Thermal Resistance (Channel-Ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a ceramic PCB MIN. TYP. 62.5 MAX. UNITS /W 1527 XP161A1355PR XP161A11A1PR TYPICAL PERFORMANCE CHARACTERISTICS 1528 XP161A11A1PR XP161A1355PR TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (11) Standardized transition Thermal Resistance vs. Pulse Width 1529 |
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